Mounting Type  

Through Hole

Package / Case  

TO-247-3

Surface Mount  

NO

Supplier Device Package  

TO-247 [B]

Material  

68

Number of Terminals  

3

Transistor Element Material  

SILICON

Continuous Drain Current Id  

25

Package  

Tube

Base Product Number  

APT24M80

Current - Continuous Drain (Id) @ 25℃  

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

625W (Tc)

Product Status  

Active

Package Description  

ROHS COMPLIANT, TO-247, 3 PIN

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT24M80B

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.35

Part Package Code  

TO-247AD

Drain Current-Max (ID)  

25 A

Vds - Drain-Source Breakdown Voltage  

800 V

Vgs th - Gate-Source Threshold Voltage  

3 V

Pd - Power Dissipation  

625 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Minimum Operating Temperature  

- 55 C

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Qg - Gate Charge  

150 nC

Rds On - Drain-Source Resistance  

310 mOhms

Id - Continuous Drain Current  

25 A

Series  

--

Operating Temperature  

-55°C ~ 150°C (TJ)

JESD-609 Code  

e1

Pbfree Code  

Yes

Part Status  

Active

ECCN Code  

EAR99

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Technology  

MOSFET (Metal Oxide)

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

625

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

390mOhm @ 12A, 10V

Vgs(th) (Max) @ Id  

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

4595 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

150 nC @ 10 V

Drain to Source Voltage (Vdss)  

800 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-247AD

Drain-source On Resistance-Max  

0.39 Ω

Pulsed Drain Current-Max (IDM)  

85 A

DS Breakdown Voltage-Min  

800 V

Channel Type  

N Channel

Avalanche Energy Rating (Eas)  

975 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Length  

--