Mounting Type  

Chassis Mount

Package / Case  

SP6

Surface Mount  

NO

Supplier Device Package  

SP6

Number of Terminals  

7

Transistor Element Material  

SILICON

Continuous Drain Current Id  

60

Package  

Bulk

Base Product Number  

APTM120

Current - Continuous Drain (Id) @ 25℃  

60A

Mfr  

Microchip Technology

Product Status  

Active

Factory Pack QuantityFactory Pack Quantity  

1

Manufacturer  

Microchip

Brand  

Microchip Technology

RoHS  

Details

Package Description  

FLANGE MOUNT, R-XUFM-X7

Package Style  

FLANGE MOUNT

Moisture Sensitivity Levels  

1

Package Body Material  

UNSPECIFIED

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APTM120A15FG

Package Shape  

RECTANGULAR

Number of Elements  

2

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.2

Drain Current-Max (ID)  

60 A

Operating Temperature  

-40°C ~ 150°C (TJ)

Series  

-

Packaging  

Tube

JESD-609 Code  

e1

Pbfree Code  

Yes

ECCN Code  

EAR99

Terminal Finish  

TIN SILVER COPPER

Additional Feature  

AVALANCHE RATED

Subcategory  

Discrete Semiconductor Modules

Technology  

MOSFET (Metal Oxide)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

7

JESD-30 Code  

R-XUFM-X7

Qualification Status  

Not Qualified

Configuration  

2 N-Channel (Half Bridge)

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

Power - Max  

1250W

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

175mOhm @ 30A, 10V

Vgs(th) (Max) @ Id  

5V @ 10mA

Input Capacitance (Ciss) (Max) @ Vds  

20600pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

748nC @ 10V

Drain to Source Voltage (Vdss)  

1200V (1.2kV)

Polarity/Channel Type  

N-CHANNEL

Product Type  

Discrete Semiconductor Modules

Drain-source On Resistance-Max  

0.175 Ω

Pulsed Drain Current-Max (IDM)  

240 A

DS Breakdown Voltage-Min  

1200 V

Channel Type  

Dual N

Avalanche Energy Rating (Eas)  

3000 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Product Category  

Discrete Semiconductor Modules