Mounting Type  

Chassis Mount

Package / Case  

SOT-227-4, miniBLOC

Mount  

Chassis Mount, Screw

Number of Pins  

4

Supplier Device Package  

SOT-227

Weight  

30.000004 g

Continuous Drain Current Id  

58

Package  

Bulk

Base Product Number  

APT58M50

Current - Continuous Drain (Id) @ 25℃  

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

543W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Id - Continuous Drain Current  

58 A

Typical Turn-Off Delay Time  

155 ns

RoHS  

Details

Rds On - Drain-Source Resistance  

65 mOhms

Tradename  

POWER MOS 8, ISOTOP

Brand  

Microchip Technology

Manufacturer  

Microchip

Mounting Styles  

Screw Mount

Factory Pack QuantityFactory Pack Quantity  

1

Minimum Operating Temperature  

- 40 C

Unit Weight  

1.058219 oz

Vgs - Gate-Source Voltage  

30 V

Maximum Operating Temperature  

+ 150 C

Transistor Polarity  

N-Channel

Pd - Power Dissipation  

543 W

Vgs th - Gate-Source Threshold Voltage  

3 V

Typical Turn-On Delay Time  

60 ns

Vds - Drain-Source Breakdown Voltage  

500 V

Number of Elements  

1

Turn Off Delay Time  

155 ns

Operating Temperature  

-40°C ~ 150°C (TJ)

Series  

POWER MOS 8™

Packaging  

Tube

Part Status  

Production (Last Updated: 2 months ago)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-40 °C

Subcategory  

Discrete Semiconductor Modules

Max Power Dissipation  

543 W

Technology  

MOSFET (Metal Oxide)

Configuration  

Single

Number of Channels  

1 Channel

Element Configuration  

Single

Turn On Delay Time  

60 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

65mOhm @ 42A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

10800 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

340 nC @ 10 V

Rise Time  

70 ns

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Product Type  

Discrete Semiconductor Modules

Continuous Drain Current (ID)  

58 A

Gate to Source Voltage (Vgs)  

30 V

Drain to Source Breakdown Voltage  

500 V

Input Capacitance  

10.8 nF

Channel Type  

N

FET Feature  

-

Drain to Source Resistance  

65 mΩ

Rds On Max  

65 mΩ

Product  

Power MOSFET Modules

Product Category  

Discrete Semiconductor Modules

Length  

38.2 mm

Height  

9.6 mm

Width  

25.4 mm

Radiation Hardening  

No