Lifecycle Status  

Production (Last Updated: 9 months ago)

Mounting Type  

Surface Mount

Package / Case  

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package  

D3PAK

Continuous Drain Current Id  

35

Package  

Tube

Base Product Number  

MSC080

Current - Continuous Drain (Id) @ 25℃  

35A

Drive Voltage (Max Rds On, Min Rds On)  

20V

Mfr  

Microchip Technology

Power Dissipation (Max)  

182W (Tc)

Product Status  

Active

MSL  

MSL 3 - 168 hours

Vds - Drain-Source Breakdown Voltage  

1.2 kV

Vgs th - Gate-Source Threshold Voltage  

1.8 V

Pd - Power Dissipation  

182 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Vgs - Gate-Source Voltage  

- 10 V, + 23 V

Unit Weight  

0.218699 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

SMD/SMT

Channel Mode  

Enhancement

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Qg - Gate Charge  

64 nC

Rds On - Drain-Source Resistance  

100 mOhms

RoHS  

Details

Id - Continuous Drain Current  

35 A

Operating Temperature  

-55°C ~ 175°C (TJ)

Series  

-

Packaging  

Tube

Subcategory  

MOSFETs

Technology  

SiCFET (Silicon Carbide)

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

182

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

100mOhm @ 15A, 20V

Vgs(th) (Max) @ Id  

2.8V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

838 pF @ 1000 V

Gate Charge (Qg) (Max) @ Vgs  

64 nC @ 20 V

Drain to Source Voltage (Vdss)  

1200 V

Vgs (Max)  

+23V, -10V

Product Type  

MOSFET

Channel Type  

N

FET Feature  

-

Product Category  

MOSFET