Package / Case  

TO-220-3

Mounting Type  

Through Hole

Supplier Device Package  

TO-220

Continuous Drain Current Id  

33

Vds - Drain-Source Breakdown Voltage  

650 V

Typical Turn-On Delay Time  

19.2 ns

Vgs th - Gate-Source Threshold Voltage  

4.75 V

Pd - Power Dissipation  

250 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 25 V, + 25 V

Unit Weight  

0.068784 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1000

Mounting Styles  

Through Hole

Channel Mode  

Enhancement

Manufacturer  

STMicroelectronics

Brand  

STMicroelectronics

Qg - Gate Charge  

52.5 nC

Tradename  

MDmesh

Rds On - Drain-Source Resistance  

91 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

59.6 ns

Id - Continuous Drain Current  

33 A

Package  

Tube

Base Product Number  

STP50

Current - Continuous Drain (Id) @ 25℃  

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

STMicroelectronics

Power Dissipation (Max)  

250W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.75V @ 250µA

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

MDmesh™

Subcategory  

MOSFETs

Technology  

Si

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

250

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

91mOhm @ 16.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2300 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs  

52.5 nC @ 10 V

Rise Time  

12 ns

Drain to Source Voltage (Vdss)  

650 V

Vgs (Max)  

±25V

Product Type  

MOSFET

Transistor Type  

1 N - Channel

Channel Type  

N Channel

FET Feature  

-

Product Category  

MOSFET