Mounting Type  

Through Hole

Package / Case  

TO-213AA, TO-66-2

Surface Mount  

NO

Supplier Device Package  

TO-66 (TO-213AA)

Number of Terminals  

2

Transistor Element Material  

SILICON

Transistor Polarity  

NPN

Package  

Bulk

Current-Collector (Ic) (Max)  

7 A

Base Product Number  

2N3879

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

7 V

Pd - Power Dissipation  

35 W

Maximum Operating Temperature  

+ 200 C

Collector-Emitter Saturation Voltage  

1.2 V

Unit Weight  

0.634459 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

7 A

RoHS  

N

Collector- Emitter Voltage VCEO Max  

75 V

Package Style  

FLANGE MOUNT

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

200 °C

Rohs Code  

No

Transition Frequency-Nom (fT)  

40 MHz

Manufacturer Part Number  

2N3879

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.07

Part Package Code  

TO-66

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Tray

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

Subcategory  

Transistors

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

2

JESD-30 Code  

O-MBFM-P2

Qualification Status  

Not Qualified

Configuration  

Single

Case Connection  

COLLECTOR

Power - Max  

35 W

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

40 @ 500mA, 5V

Current - Collector Cutoff (Max)  

4mA

JEDEC-95 Code  

TO-213AA

Vce Saturation (Max) @ Ib, Ic  

1.2V @ 400mA, 4A

Voltage - Collector Emitter Breakdown (Max)  

75 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

120 V

Power Dissipation-Max (Abs)  

35 W

Collector Current-Max (IC)  

7 A

DC Current Gain-Min (hFE)  

12

Continuous Collector Current  

7

Collector-Emitter Voltage-Max  

75 V

Product Category  

Bipolar Transistors - BJT