Contact Plating  

Gold

Mount  

Flanges, Panel

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Surface Mount  

NO

Supplier Device Package  

TO-247AD

Body Material  

Aluminium

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Compliant

Package  

Tube

Current - Continuous Drain (Id) @ 25℃  

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

360W (Tc)

Product Status  

Obsolete

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Package Description  

FLANGE MOUNT, R-PSFM-T3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

No

Manufacturer Part Number  

APT5020BN

Turn-on Time-Max (ton)  

124 ns

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Number of Elements  

1

Part Life Cycle Code  

Obsolete

Ihs Manufacturer  

ADVANCED POWER TECHNOLOGY INC

Turn-off Time-Max (toff)  

237 ns

Risk Rank  

8.6

Drain Current-Max (ID)  

28 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS IV®

JESD-609 Code  

e0

Termination  

Crimp

Connector Type  

Circular, Receptacle

Number of Positions  

61

Terminal Finish  

Tin/Lead (Sn/Pb)

Max Operating Temperature  

175 °C

Min Operating Temperature  

-65 °C

Gender  

Receptacle

Fastening Type  

Threaded

Subcategory  

FET General Purpose Power

Technology  

MOSFET (Metal Oxide)

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Number of Contacts  

61

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

200mOhm @ 14A, 10V

Vgs(th) (Max) @ Id  

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

3500 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

210 nC @ 10 V

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-247AD

Drain Current-Max (Abs) (ID)  

28 A

Drain-source On Resistance-Max  

0.2 Ω

Pulsed Drain Current-Max (IDM)  

112 A

DS Breakdown Voltage-Min  

500 V

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

360 W

FET Feature  

-

Feedback Cap-Max (Crss)  

350 pF

Power Dissipation Ambient-Max  

360 W

Features  

Shielded

REACH SVHC  

Unknown

Ratings  

Environment Resistant