Mounting Type  

Chassis Mount

Package / Case  

SOT-227-4, miniBLOC

Surface Mount  

NO

Supplier Device Package  

SOT-227

Number of Terminals  

4

Transistor Element Material  

SILICON

Package  

Tube

Base Product Number  

APT45M100

Current - Continuous Drain (Id) @ 25℃  

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

960W (Tc)

Product Status  

Active

Package Description  

ROHS COMPLIANT, ISOTOP-4

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Manufacturer Package Code  

ISOTOP

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT45M100J

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.36

Part Package Code  

ISOTOP

Drain Current-Max (ID)  

45 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

Pbfree Code  

Yes

Additional Feature  

AVALANCHE RATED, UL RECOGNIZED

Technology  

MOSFET (Metal Oxide)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

4

JESD-30 Code  

R-PUFM-X4

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

180mOhm @ 33A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

18500 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

570 nC @ 10 V

Drain to Source Voltage (Vdss)  

1000 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Drain-source On Resistance-Max  

0.18 Ω

Pulsed Drain Current-Max (IDM)  

260 A

DS Breakdown Voltage-Min  

1000 V

Avalanche Energy Rating (Eas)  

4075 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-