Mount  

Chassis Mount, Screw

Mounting Type  

Chassis Mount

Package / Case  

SOT-227-4, miniBLOC

Number of Pins  

4

Supplier Device Package  

ISOTOP®

Weight  

30.000004 g

RoHS  

Non-Compliant

Continuous Drain Current Id  

77

Schedule B  

8541290080

Number of Elements  

1

Voltage Rating (DC)  

600 V

Turn Off Delay Time  

110 ns

Package  

Tube

Base Product Number  

APT77N60

Current - Continuous Drain (Id) @ 25℃  

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

568W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3.9V @ 5.4mA

Vds - Drain-Source Breakdown Voltage  

600 V

Typical Turn-On Delay Time  

18 ns

Vgs th - Gate-Source Threshold Voltage  

2.1 V

Pd - Power Dissipation  

568 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

1.058219 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Screw Mounts

Manufacturer  

Microchip

Brand  

Microchip Technology

Tradename  

ISOTOP

Rds On - Drain-Source Resistance  

30 mOhms

Typical Turn-Off Delay Time  

110 ns

Id - Continuous Drain Current  

77 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

Packaging  

Tube

Part Status  

Production (Last Updated: 1 month ago)

Type  

MOSFET

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Subcategory  

Discrete Semiconductor Modules

Max Power Dissipation  

568 W

Technology  

MOSFET (Metal Oxide)

Current Rating  

77 A

Configuration  

Single

Number of Channels  

1

Element Configuration  

Single

Power Dissipation  

568

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

35mOhm @ 60A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

13600 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

640 nC @ 10 V

Rise Time  

27 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±20V

Product Type  

Discrete Semiconductor Modules

Continuous Drain Current (ID)  

77 A

Gate to Source Voltage (Vgs)  

20 V

Drain to Source Breakdown Voltage  

600 V

Input Capacitance  

13.6 nF

Channel Type  

N

FET Feature  

-

Drain to Source Resistance  

30 mΩ

Rds On Max  

35 mΩ

Product  

Power MOSFET Modules

Product Category  

Discrete Semiconductor Modules

Width  

25.4 mm

Height  

9.6 mm

Length  

38.2 mm

Radiation Hardening  

No

Lead Free  

Lead Free