Mounting Type  

Chassis Mount

Package / Case  

SP6

Surface Mount  

NO

Supplier Device Package  

SP6

Number of Terminals  

4

Transistor Element Material  

SILICON

RoHS  

Compliant

Voltage Rating (DC)  

11 V

Continuous Drain Current Id  

65

Package  

Bulk

Base Product Number  

APTM100

Current - Continuous Drain (Id) @ 25℃  

65A

Mfr  

Microchip Technology

Product Status  

Active

Factory Pack QuantityFactory Pack Quantity  

1

Manufacturer  

Microchip

Brand  

Microchip Technology

Package Description  

FLANGE MOUNT, R-XUFM-X4

Package Style  

FLANGE MOUNT

Moisture Sensitivity Levels  

1

Package Body Material  

UNSPECIFIED

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APTM100A13DG

Package Shape  

RECTANGULAR

Number of Elements  

2

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.38

Drain Current-Max (ID)  

65 A

Packaging  

Tape & Reel (TR)

Operating Temperature  

-40°C ~ 150°C (TJ)

Series  

-

JESD-609 Code  

e1

Pbfree Code  

Yes

ECCN Code  

EAR99

Terminal Finish  

TIN SILVER COPPER

Max Operating Temperature  

150 °C

Min Operating Temperature  

-65 °C

Additional Feature  

AVALANCHE RATED

Subcategory  

Discrete Semiconductor Modules

Power Rating  

1 W

Technology  

MOSFET (Metal Oxide)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

4

JESD-30 Code  

R-XUFM-X4

Qualification Status  

Not Qualified

Configuration  

2 N-Channel (Half Bridge)

Impedance  

20 Ω

Element Configuration  

Common Anode

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1 W

Case Connection  

ISOLATED

Power - Max  

1250W

Max Reverse Leakage Current  

100 nA

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

156mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id  

5V @ 6mA

Input Capacitance (Ciss) (Max) @ Vds  

15200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

562nC @ 10V

Drain to Source Voltage (Vdss)  

1000V (1kV)

Polarity/Channel Type  

N-CHANNEL

Zener Voltage  

11 V

Product Type  

Discrete Semiconductor Modules

Voltage Tolerance  

5 %

Drain-source On Resistance-Max  

0.156 Ω

Pulsed Drain Current-Max (IDM)  

240 A

DS Breakdown Voltage-Min  

1000 V

Channel Type  

Dual N

Avalanche Energy Rating (Eas)  

1300 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Product Category  

Discrete Semiconductor Modules

Lead Free  

Lead Free