Mounting Type  

Chassis Mount

Package / Case  

SP6

Supplier Device Package  

SP6

Continuous Drain Current Id  

65

Package  

Bulk

Base Product Number  

APTM100

Current - Continuous Drain (Id) @ 25℃  

65A

Mfr  

Microchip Technology

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

1 kV

Typical Turn-On Delay Time  

9 ns

Vgs th - Gate-Source Threshold Voltage  

3 V

Pd - Power Dissipation  

1.25 kW

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

30 V

Unit Weight  

3.880136 oz

Minimum Operating Temperature  

- 40 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Screw Mount

Manufacturer  

Microchip

Brand  

Microchip Technology

Tradename  

POWER MOS 7

Rds On - Drain-Source Resistance  

130 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

50 ns

Id - Continuous Drain Current  

65 A

Operating Temperature  

-40°C ~ 150°C (TJ)

Series  

-

Packaging  

Tube

Subcategory  

Discrete Semiconductor Modules

Technology  

MOSFET (Metal Oxide)

Configuration  

2 N-Channel (Half Bridge)

Number of Channels  

1 Channel

Power Dissipation  

1.25

Power - Max  

1250W

Rds On (Max) @ Id, Vgs  

156mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id  

5V @ 6mA

Input Capacitance (Ciss) (Max) @ Vds  

15200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

562nC @ 10V

Rise Time  

9 ns

Drain to Source Voltage (Vdss)  

1000V (1kV)

Product Type  

Discrete Semiconductor Modules

Channel Type  

Dual N

FET Feature  

-

Product  

Power MOSFET Modules

Product Category  

Discrete Semiconductor Modules

Width  

62 mm

Height  

21.9 mm

Length  

108 mm