Lifecycle Status  

Production (Last Updated: 1 month ago)

Mount  

Chassis Mount, Screw

Mounting Type  

Chassis Mount

Package / Case  

SOT-227-4, miniBLOC

Number of Pins  

4

Supplier Device Package  

ISOTOP®

Weight  

30.000004 g

RoHS  

Non-Compliant

Continuous Drain Current Id  

52

Number of Elements  

1

Voltage Rating (DC)  

500 V

Turn Off Delay Time  

58 ns

Package  

Tube

Base Product Number  

APL502

Current - Continuous Drain (Id) @ 25℃  

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

15V

Mfr  

Microchip Technology

Power Dissipation (Max)  

568W (Tc)

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

500 V

Typical Turn-On Delay Time  

13 ns

Vgs th - Gate-Source Threshold Voltage  

2 V

Pd - Power Dissipation  

568 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Unit Weight  

1.015890 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Screw Mounts

Manufacturer  

Microchip

Brand  

Microchip Technology

Tradename  

ISOTOP

Rds On - Drain-Source Resistance  

90 mOhms

Typical Turn-Off Delay Time  

58 ns

Id - Continuous Drain Current  

52 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

Packaging  

Tube

Type  

Linear Power MOSFET

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Subcategory  

Discrete Semiconductor Modules

Max Power Dissipation  

568 W

Technology  

MOSFET (Metal Oxide)

Current Rating  

52 A

Configuration  

Single

Number of Channels  

1

Element Configuration  

Single

Power Dissipation  

568

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

90mOhm @ 26A, 12V

Vgs(th) (Max) @ Id  

4V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

9000 pF @ 25 V

Rise Time  

24 ns

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Product Type  

Discrete Semiconductor Modules

Continuous Drain Current (ID)  

52 A

Gate to Source Voltage (Vgs)  

30 V

Drain to Source Breakdown Voltage  

500 V

Input Capacitance  

9 nF

Channel Type  

N

FET Feature  

-

Drain to Source Resistance  

90 mΩ

Rds On Max  

90 mΩ

Product  

Power MOSFET Modules

Product Category  

Discrete Semiconductor Modules

Width  

25.4 mm

Height  

9.6 mm

Length  

38.2 mm

Radiation Hardening  

No

Lead Free  

Lead Free