Lifecycle Status  

Production (Last Updated: 2 months ago)

Mounting Type  

Chassis Mount

Package / Case  

SOT-227-4, miniBLOC

Mount  

Chassis Mount, Screw

Surface Mount  

NO

Number of Pins  

4

Supplier Device Package  

ISOTOP®

Weight  

30.000004 g

Number of Terminals  

4

Transistor Element Material  

SILICON

Package  

Tube

Base Product Number  

APT30F60

Current - Continuous Drain (Id) @ 25℃  

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

355W (Tc)

Product Status  

Active

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Number of Elements  

1

RoHS  

Compliant

Turn Off Delay Time  

145 ns

Package Description  

ISOTOP-4

Package Style  

FLANGE MOUNT

Package Body Material  

UNSPECIFIED

Manufacturer Package Code  

ISOTOP

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT30F60J

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.52

Part Package Code  

ISOTOP

Drain Current-Max (ID)  

31 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

Pbfree Code  

Yes

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED, UL RECOGNIZED

Max Power Dissipation  

355 W

Technology  

MOSFET (Metal Oxide)

Terminal Position  

UPPER

Terminal Form  

UNSPECIFIED

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

4

JESD-30 Code  

R-XUFM-X4

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

355 W

Case Connection  

ISOLATED

Turn On Delay Time  

48 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

150mOhm @ 21A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

8590 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

215 nC @ 10 V

Rise Time  

55 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

31 A

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.15 Ω

Drain to Source Breakdown Voltage  

600 V

Pulsed Drain Current-Max (IDM)  

160 A

Input Capacitance  

8.59 nF

DS Breakdown Voltage-Min  

600 V

Avalanche Energy Rating (Eas)  

1200 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Drain to Source Resistance  

120 mΩ

Rds On Max  

150 mΩ

Width  

25.4 mm

Height  

9.6 mm

Length  

38.2 mm

Radiation Hardening  

No