Package / Case  

TO-247-3 Variant

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Supplier Device Package  

T-MAX™ [B2]

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Product Status  

Active

Power Dissipation (Max)  

1135W (Tc)

Mfr  

Microchip Technology

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

84A (Tc)

Base Product Number  

APT84F50

Package  

Tube

Number of Elements  

1

RoHS  

Compliant

Turn Off Delay Time  

155 ns

Series  

POWER MOS 8™

Operating Temperature  

-55°C ~ 150°C (TJ)

Part Status  

Production (Last Updated: 2 months ago)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Max Power Dissipation  

1.135 kW

Technology  

MOSFET (Metal Oxide)

Turn On Delay Time  

60 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

65mOhm @ 42A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

13500 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

340 nC @ 10 V

Rise Time  

70 ns

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Continuous Drain Current (ID)  

84 A

Gate to Source Voltage (Vgs)  

30 V

Input Capacitance  

13.5 nF

FET Feature  

-

Rds On Max  

65 mΩ

Radiation Hardening  

No