Mounting Type  

Through Hole

Package / Case  

TO-247-3 Variant

Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

T-MAX™ [B2]

Number of Terminals  

3

Transistor Element Material  

SILICON

Package  

Tube

Base Product Number  

APT56F60

Current - Continuous Drain (Id) @ 25℃  

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

1040W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Schedule B  

8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080

Turn Off Delay Time  

190 ns

RoHS  

Compliant

Number of Elements  

1

Package Description  

TO-247, 3 PIN

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT56F60B2

Package Shape  

RECTANGULAR

Manufacturer  

Microsemi Corporation

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

2.26

Part Package Code  

TO-247AB

Drain Current-Max (ID)  

56 A

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

JESD-609 Code  

e3

Pbfree Code  

Yes

Part Status  

Production (Last Updated: 2 months ago)

Terminal Finish  

PURE MATTE TIN

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

FAST SWITCHING, AVALANCHE RATED

Subcategory  

FET General Purpose Power

Max Power Dissipation  

1.04 kW

Technology  

MOSFET (Metal Oxide)

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1.04 kW

Case Connection  

DRAIN

Turn On Delay Time  

65 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

110mOhm @ 28A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

11300 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

280 nC @ 10 V

Rise Time  

75 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

60 A

JEDEC-95 Code  

TO-247AB

Gate to Source Voltage (Vgs)  

30 V

Drain Current-Max (Abs) (ID)  

56 A

Drain-source On Resistance-Max  

0.13 Ω

Pulsed Drain Current-Max (IDM)  

210 A

Input Capacitance  

11.3 nF

DS Breakdown Voltage-Min  

600 V

Avalanche Energy Rating (Eas)  

1580 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

1040 W

FET Feature  

-

Rds On Max  

110 mΩ

Radiation Hardening  

No

REACH SVHC  

unknown