Mounting Type  

Through Hole

Package / Case  

TO-205AD, TO-39-3 Metal Can

Supplier Device Package  

TO-39

Transistor Polarity  

NPN

Package  

Bulk

Current-Collector (Ic) (Max)  

2 A

Base Product Number  

-

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

5.5 V

Pd - Power Dissipation  

1 W

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

70 at 2.5 A, 5 VDC

Collector-Emitter Saturation Voltage  

750 mV

Unit Weight  

0.241715 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Manufacturer  

Microchip

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

2 A

DC Current Gain hFE Max  

200 at 2.5 A, 5 VDC

RoHS  

N

Collector- Emitter Voltage VCEO Max  

80 V

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Bulk

Subcategory  

Transistors

Technology  

Si

Configuration  

Single

Power Dissipation  

11.8

Power - Max  

1 W

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

70 @ 2.5A, 5V

Current - Collector Cutoff (Max)  

100µA

Vce Saturation (Max) @ Ib, Ic  

1.5V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max)  

80 V

Collector Base Voltage (VCBO)  

100 V

Continuous Collector Current  

2

Product Category  

Bipolar Transistors - BJT