Lifecycle Status  

Production (Last Updated: 1 month ago)

Surface Mount  

NO

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-213AA, TO-66-2

Number of Pins  

3

Supplier Device Package  

TO-66 (TO-213AA)

Number of Terminals  

2

Transistor Element Material  

SILICON

Manufacturer Part Number  

2N5660

Rohs Code  

No

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Part Package Code  

TO-66

Risk Rank  

5.15

Number of Elements  

1

Operating Temperature-Max  

200 °C

Package Body Material  

METAL

Package Shape  

ROUND

Package Style  

FLANGE MOUNT

Reflow Temperature-Max (s)  

NOT SPECIFIED

Transition Frequency-Nom (fT)  

20 MHz

Collector-Emitter Saturation Voltage  

800 mV

Collector-Emitter Breakdown Voltage  

200 V

hFEMin  

40

RoHS  

Compliant

Package  

Bulk

Current-Collector (Ic) (Max)  

2 A

Base Product Number  

2N5660

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

6 V

Pd - Power Dissipation  

2 W

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Brand  

Microchip Technology

Maximum DC Collector Current  

2 A

Collector- Emitter Voltage VCEO Max  

200 V

Packaging  

Bulk

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Max Operating Temperature  

200 °C

Min Operating Temperature  

-65 °C

Max Power Dissipation  

2 W

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Pin Count  

2

JESD-30 Code  

O-MBFM-P2

Qualification Status  

Not Qualified

Configuration  

SINGLE

Power Dissipation  

2 W

Case Connection  

COLLECTOR

Power - Max  

2 W

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

Collector Emitter Voltage (VCEO)  

200 V

Max Collector Current  

2 A

DC Current Gain (hFE) (Min) @ Ic, Vce  

40 @ 500mA, 5V

Current - Collector Cutoff (Max)  

200nA

JEDEC-95 Code  

TO-213AA

Vce Saturation (Max) @ Ib, Ic  

800mV @ 400mA, 2A

Voltage - Collector Emitter Breakdown (Max)  

200 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

250 V

Power Dissipation-Max (Abs)  

20 W

Emitter Base Voltage (VEBO)  

6 V

Collector Current-Max (IC)  

1 A

DC Current Gain-Min (hFE)  

40

Max Junction Temperature (Tj)  

200 °C

Collector-Emitter Voltage-Max  

200 V

Product Category  

Bipolar Transistors - BJT

Height  

8.64 mm

Radiation Hardening  

No