Surface Mount  

NO

Mounting Type  

Through Hole

Package / Case  

TO-205AD, TO-39-3 Metal Can

Supplier Device Package  

TO-39 (TO-205AD)

Number of Terminals  

3

Transistor Element Material  

SILICON

Manufacturer Part Number  

2N6193

Rohs Code  

No

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Part Package Code  

TO-39

Package Description  

HERMETIC SEALED, METAL CAN-3

Risk Rank  

1.54

Number of Elements  

1

Operating Temperature-Max  

200 °C

Package Body Material  

METAL

Package Shape  

ROUND

Package Style  

CYLINDRICAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Turn-off Time-Max (toff)  

2020 ns

Turn-on Time-Max (ton)  

200 ns

Package  

Bulk

Current-Collector (Ic) (Max)  

5 A

Base Product Number  

2N6193

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

6 V

Pd - Power Dissipation  

1 W

Transistor Polarity  

PNP

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

60 at 2 A, 2 VDC

Collector-Emitter Saturation Voltage  

700 mV

Unit Weight  

0.504594 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

5 A

DC Current Gain hFE Max  

240 at 2 A, 2 VDC

RoHS  

N

Collector- Emitter Voltage VCEO Max  

100 V

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Bulk

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

HTS Code  

8541.29.00.95

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

3

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Power - Max  

1 W

Transistor Application  

SWITCHING

Polarity/Channel Type  

PNP

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce  

60 @ 2A, 2V

Current - Collector Cutoff (Max)  

100µA

JEDEC-95 Code  

TO-39

Vce Saturation (Max) @ Ib, Ic  

1.2V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max)  

100 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

100 V

Power Dissipation-Max (Abs)  

10 W

Collector Current-Max (IC)  

5 A

DC Current Gain-Min (hFE)  

40

Collector-Emitter Voltage-Max  

100 V

Product Category  

Bipolar Transistors - BJT