Surface Mount  

NO

Mounting Type  

Through Hole

Package / Case  

TO-206AA, TO-18-3 Metal Can

Supplier Device Package  

TO-18 (TO-206AA)

Number of Terminals  

3

Manufacturer Part Number  

MX2N5115

Rohs Code  

No

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Part Package Code  

BCY

Package Description  

CYLINDRICAL, O-MBCY-W3

Risk Rank  

5.8

Package Body Material  

METAL

Package Shape  

ROUND

Package Style  

CYLINDRICAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Package  

Bulk

Mfr  

Microchip Technology

Product Status  

Active

Vds - Drain-Source Breakdown Voltage  

30 V

Pd - Power Dissipation  

0.5 W

Transistor Polarity  

P-Channel

Maximum Operating Temperature  

+ 200 C

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Drain-Source Current at Vgs=0  

- 60 mA

Mounting Styles  

Through Hole

Brand  

Microchip Technology

Rds On - Drain-Source Resistance  

100 Ohms

Maximum Drain Gate Voltage  

30 V

RoHS  

N

Vgs - Gate-Source Breakdown Voltage  

30 V

Gate-Source Cutoff Voltage  

6 V

Id - Continuous Drain Current  

-1 nA

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

Military, MIL-PRF-19500

Packaging  

Bulk

JESD-609 Code  

e4

Type  

JFET

Terminal Finish  

GOLD OVER NICKEL

Subcategory  

Transistors

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

3

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

Single

Power - Max  

500 mW

FET Type  

P-Channel

Input Capacitance (Ciss) (Max) @ Vds  

25pF @ 15V

Drain to Source Voltage (Vdss)  

30 V

Product Type  

JFETs

JEDEC-95 Code  

TO-18

Current - Drain (Idss) @ Vds (Vgs=0)  

15 mA @ 15 V

Voltage - Cutoff (VGS off) @ Id  

6 V @ 1 nA

Voltage - Breakdown (V(BR)GSS)  

30 V

Resistance - RDS(On)  

100 Ohms

Product Category  

JFET