Surface Mount  

NO

Mounting Type  

Through Hole

Package / Case  

TO-213AA, TO-66-2

Mount  

Through Hole

Number of Pins  

3

Supplier Device Package  

TO-66 (TO-213AA)

Manufacturer Part Number  

2N6295

Rohs Code  

No

Part Life Cycle Code  

Transferred

Ihs Manufacturer  

MICROSEMI CORP

Part Package Code  

TO-66

Risk Rank  

5.03

Operating Temperature-Max  

200 °C

Transition Frequency-Nom (fT)  

4 MHz

Package  

Bulk

Current-Collector (Ic) (Max)  

500 µA

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

5 V

Pd - Power Dissipation  

50 W

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

750

Collector-Emitter Saturation Voltage  

3 V

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

8 A

DC Current Gain hFE Max  

18000

RoHS  

N

Collector- Emitter Voltage VCEO Max  

80 V

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Tray

JESD-609 Code  

e0

Terminal Finish  

Tin/Lead (Sn/Pb)

Technology  

Si

Reach Compliance Code  

not_compliant

Pin Count  

2

Configuration  

DARLINGTON

Element Configuration  

Single

Power - Max  

50 W

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN - Darlington

Collector Emitter Voltage (VCEO)  

80 V

Max Collector Current  

8 A

DC Current Gain (hFE) (Min) @ Ic, Vce  

300 @ 1.5A, 3V

Current - Collector Cutoff (Max)  

500µA

Voltage - Collector Emitter Breakdown (Max)  

80 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

80 V

Power Dissipation-Max (Abs)  

50 W

Emitter Base Voltage (VEBO)  

5 V

Collector Current-Max (IC)  

4 A

DC Current Gain-Min (hFE)  

750

Continuous Collector Current  

4 A

Product Category  

Bipolar Transistors - BJT