Lifecycle Status  

Production (Last Updated: 1 month ago)

Surface Mount  

NO

Mounting Type  

Through Hole

Package / Case  

TO-205AD, TO-39-3 Metal Can

Mount  

Through Hole

Number of Pins  

3

Supplier Device Package  

TO-39 (TO-205AD)

Number of Terminals  

3

Transistor Element Material  

SILICON

Transition Frequency-Nom (fT)  

150 MHz

Manufacturer Part Number  

2N3500

Rohs Code  

No

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.4

Number of Elements  

1

Operating Temperature-Max  

200 °C

Package Body Material  

METAL

Package Shape  

ROUND

Package Style  

CYLINDRICAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Package  

Bulk

Current-Collector (Ic) (Max)  

300 mA

Base Product Number  

2N3500

Mfr  

Microchip Technology

Product Status  

Active

Collector-Emitter Breakdown Voltage  

150 V

Power Dissipation (Max)  

1 W

Schedule B  

8541210080, 8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080

RoHS  

Compliant

Emitter- Base Voltage VEBO  

6 V

Pd - Power Dissipation  

1 W

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

40 at 150mA, 10 V

Collector-Emitter Saturation Voltage  

400 mV

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Brand  

Microchip Technology

Maximum DC Collector Current  

300 mA

DC Current Gain hFE Max  

120 at 150 mA, 10 V

Collector- Emitter Voltage VCEO Max  

150 V

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Packaging  

Bulk

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

Max Operating Temperature  

200 °C

Min Operating Temperature  

-65 °C

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Polarity  

NPN

Configuration  

SINGLE

Power Dissipation  

1 W

Power - Max  

1 W

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

Collector Emitter Voltage (VCEO)  

150 V

Max Collector Current  

300 mA

DC Current Gain (hFE) (Min) @ Ic, Vce  

40 @ 150mA, 10V

Current - Collector Cutoff (Max)  

10µA (ICBO)

JEDEC-95 Code  

TO-39

Vce Saturation (Max) @ Ib, Ic  

400mV @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max)  

150 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

150 V

Power Dissipation-Max (Abs)  

5 W

Emitter Base Voltage (VEBO)  

6 V

Collector Current-Max (IC)  

0.3 A

DC Current Gain-Min (hFE)  

40

Collector-Emitter Voltage-Max  

150 V

Product Category  

Bipolar Transistors - BJT

Radiation Hardening  

No