Lifecycle Status  

Production (Last Updated: 2 months ago)

Surface Mount  

NO

Package / Case  

TO-5-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Supplier Device Package  

TO-5

Number of Terminals  

3

Transistor Element Material  

SILICON

Manufacturer Part Number  

JAN2N697

Rohs Code  

No

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Package Description  

CYLINDRICAL, O-MBCY-W3

Risk Rank  

1.59

Number of Elements  

1

Operating Temperature-Max  

200 °C

Package Body Material  

METAL

Package Shape  

ROUND

Package Style  

CYLINDRICAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Turn-off Time-Max (toff)  

1000 ns

Turn-on Time-Max (ton)  

200 ns

Emitter- Base Voltage VEBO  

5 V

Pd - Power Dissipation  

2 W

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

3

Collector-Emitter Saturation Voltage  

1.5 V

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

Through Hole

Brand  

Microchip / Microsemi

DC Current Gain hFE Max  

120

RoHS  

N

Collector- Emitter Voltage VCEO Max  

40 V

Schedule B  

8541210080

Package  

Bulk

Mfr  

Microchip Technology

Product Status  

Active

Packaging  

Bulk

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

Military, MIL-PRF-19500/99

JESD-609 Code  

e0

Pbfree Code  

No

Terminal Finish  

Tin/Lead (Sn/Pb)

Max Operating Temperature  

125 °C

Min Operating Temperature  

-65 °C

HTS Code  

8541.21.00.95

Subcategory  

Transistors

Max Power Dissipation  

600 mW

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Reference Standard  

MIL-19500/99

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Qualified

Polarity  

NPN

Configuration  

SINGLE

Power Dissipation  

600 mW

Power - Max  

600 mW

Transistor Application  

SWITCHING

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

Collector Emitter Voltage (VCEO)  

40 V

DC Current Gain (hFE) (Min) @ Ic, Vce  

40 @ 150mA, 10V

Current - Collector Cutoff (Max)  

10µA (ICBO)

JEDEC-95 Code  

TO-5

Vce Saturation (Max) @ Ib, Ic  

1.5V @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max)  

40 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

60 V

Emitter Base Voltage (VEBO)  

5 V

DC Current Gain-Min (hFE)  

20

Product Category  

Bipolar Transistors - BJT

Radiation Hardening  

No