Factory Lead Time  

18 Weeks

Surface Mount  

YES

Package / Case  

TO-263-3

Number of Terminals  

2

Transistor Element Material  

SILICON

Manufacturer Part Number  

IPB65R190CFD

Rohs Code  

Yes

Part Life Cycle Code  

Active

Ihs Manufacturer  

INFINEON TECHNOLOGIES AG

Part Package Code  

D2PAK

Package Description  

SMALL OUTLINE, R-PSSO-G2

Risk Rank  

0.71

Samacsys Description  

Infineon IPB65R190CFD N-channel MOSFET Transistor, 17.5 A, 700 V, 3-Pin TO-263

Drain Current-Max (ID)  

17.5 A

Moisture Sensitivity Levels  

1

Number of Elements  

1

Operating Temperature-Max  

150 °C

Operating Temperature-Min  

-55 °C

Package Body Material  

PLASTIC/EPOXY

Package Shape  

RECTANGULAR

Package Style  

SMALL OUTLINE

Reflow Temperature-Max (s)  

NOT SPECIFIED

Vds - Drain-Source Breakdown Voltage  

650 V

Typical Turn-On Delay Time  

12 ns

Vgs th - Gate-Source Threshold Voltage  

3.5 V

Pd - Power Dissipation  

151 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 150 C

Vgs - Gate-Source Voltage  

- 20 V, + 20 V

Unit Weight  

0.139332 oz

Minimum Operating Temperature  

- 55 C

Factory Pack QuantityFactory Pack Quantity  

1000

Mounting Styles  

SMD/SMT

Channel Mode  

Enhancement

Part # Aliases  

SP000905378 IPB65R19CFDXT IPB65R190CFDATMA1

Brand  

Infineon Technologies

Qg - Gate Charge  

68 nC

Tradename  

CoolMOS

Rds On - Drain-Source Resistance  

171 mOhms

RoHS  

Details

Typical Turn-Off Delay Time  

53.2 ns

Id - Continuous Drain Current  

17.5 A

Series  

CoolMOS CFD2

Packaging  

MouseReel

JESD-609 Code  

e3

Pbfree Code  

No

Terminal Finish  

Tin (Sn)

Subcategory  

MOSFETs

Technology  

Si

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

4

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

Transistor Application  

SWITCHING

Rise Time  

8.4 ns

Polarity/Channel Type  

N-CHANNEL

Product Type  

MOSFET

Transistor Type  

1 N-Channel

JEDEC-95 Code  

TO-263AB

Drain Current-Max (Abs) (ID)  

17.5 A

Drain-source On Resistance-Max  

0.19 Ω

Pulsed Drain Current-Max (IDM)  

57.2 A

DS Breakdown Voltage-Min  

650 V

Avalanche Energy Rating (Eas)  

484 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Product Category  

MOSFET

Width  

9.25 mm

Height  

4.4 mm

Length  

10 mm