Surface Mount  

YES

Package / Case  

SMD-4

Mounting Type  

Surface Mount

Supplier Device Package  

UB

Number of Terminals  

3

Transistor Element Material  

SILICON

Manufacturer Part Number  

2N3501UB

Rohs Code  

No

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Package Description  

SMALL OUTLINE, R-CDSO-N3

Risk Rank  

5.1

Number of Elements  

1

Operating Temperature-Max  

200 °C

Package Body Material  

CERAMIC, METAL-SEALED COFIRED

Package Shape  

RECTANGULAR

Package Style  

SMALL OUTLINE

Reflow Temperature-Max (s)  

NOT SPECIFIED

Transistor Polarity  

NPN

Emitter- Base Voltage VEBO  

6 V

Pd - Power Dissipation  

500 mW

Maximum Operating Temperature  

+ 200 C

Collector-Emitter Saturation Voltage  

400 mV

Unit Weight  

0.057223 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Mounting Styles  

SMD/SMT

Gain Bandwidth Product fT  

-

Brand  

Microchip Technology / Atmel

Maximum DC Collector Current  

300 mA

RoHS  

N

Collector- Emitter Voltage VCEO Max  

150 V

Package  

Bulk

Current-Collector (Ic) (Max)  

300 mA

Base Product Number  

2N3501

Mfr  

Microchip Technology

Product Status  

Active

Packaging  

Waffle

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

Military, MIL-PRF-19500/366

JESD-609 Code  

e0

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

HTS Code  

8541.21.00.95

Technology  

Si

Terminal Position  

DUAL

Terminal Form  

NO LEAD

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

JESD-30 Code  

R-CDSO-N3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Power - Max  

500 mW

Polarity/Channel Type  

NPN

Product Type  

BJTs - Bipolar Transistors

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

100 @ 150mA, 10V

Current - Collector Cutoff (Max)  

10µA (ICBO)

Vce Saturation (Max) @ Ib, Ic  

400mV @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max)  

150 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

150 V

Power Dissipation-Max (Abs)  

0.5 W

Collector Current-Max (IC)  

0.3 A

DC Current Gain-Min (hFE)  

20

Continuous Collector Current  

300

Collector-Emitter Voltage-Max  

150 V

Product Category  

Bipolar Transistors - BJT