Surface Mount  

NO

Package / Case  

TO-18-3

Mounting Type  

Through Hole

Supplier Device Package  

TO-18

Number of Terminals  

3

Transistor Element Material  

SILICON

Manufacturer Part Number  

2N4391

Rohs Code  

Yes

Part Life Cycle Code  

Active

Ihs Manufacturer  

CALOGIC LLC

Package Description  

CYLINDRICAL, O-MBCY-W3

Risk Rank  

5.02

Number of Elements  

1

Operating Temperature-Max  

200 °C

Operating Temperature-Min  

-55 °C

Package Body Material  

METAL

Package Shape  

ROUND

Package Style  

CYLINDRICAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Vds - Drain-Source Breakdown Voltage  

0.4 V

Pd - Power Dissipation  

1.8 W

Transistor Polarity  

N-Channel

Maximum Operating Temperature  

+ 175 C

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

1

Drain-Source Current at Vgs=0  

150 mA

Mounting Styles  

Through Hole

Brand  

Microchip Technology

Rds On - Drain-Source Resistance  

30 Ohms

Maximum Drain Gate Voltage  

40 V

RoHS  

N

Vgs - Gate-Source Breakdown Voltage  

40 V

Gate-Source Cutoff Voltage  

10 V

Id - Continuous Drain Current  

12 mA

Package  

Bulk

Base Product Number  

2N4391

Mfr  

Microchip Technology

Product Status  

Active

Operating Temperature  

-55°C ~ 125°C (TJ)

Series  

-

Pbfree Code  

Yes

ECCN Code  

EAR99

Type  

JFET

HTS Code  

8542.90.00.00

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Operating Mode  

DEPLETION MODE

Case Connection  

GATE

Power - Max  

1.8 W

FET Type  

N-Channel

Transistor Application  

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds  

14pF @ 20V

Polarity/Channel Type  

N-CHANNEL

Product Type  

JFETs

JEDEC-95 Code  

TO-18

Drain-source On Resistance-Max  

30 Ω

FET Technology  

JUNCTION

Power Dissipation-Max (Abs)  

1.8 W

Feedback Cap-Max (Crss)  

3.5 pF

Power Dissipation Ambient-Max  

1.8 W

Current - Drain (Idss) @ Vds (Vgs=0)  

50 mA @ 20 V

Voltage - Cutoff (VGS off) @ Id  

4 V @ 1 nA

Voltage - Breakdown (V(BR)GSS)  

40 V

Resistance - RDS(On)  

30 Ohms

Product Category  

JFET