Surface Mount  

NO

Mounting Type  

Through Hole

Package / Case  

TO-204AA, TO-3

Supplier Device Package  

TO-3

Number of Terminals  

2

Transistor Element Material  

SILICON

Manufacturer Part Number  

NTE29

Rohs Code  

Yes

Part Life Cycle Code  

Active

Ihs Manufacturer  

NTE ELECTRONICS INC

Package Description  

FLANGE MOUNT, O-MBFM-P2

Risk Rank  

1.72

Number of Elements  

1

Package Body Material  

METAL

Package Shape  

ROUND

Package Style  

FLANGE MOUNT

Reflow Temperature-Max (s)  

NOT SPECIFIED

Transition Frequency-Nom (fT)  

2 MHz

Emitter-Base Voltage  

5(V)

Operating Temperature Classification  

Military

Package Type  

TO-3

Transistor Polarity  

NPN

Collector-Base Voltage  

80(V)

Category  

Bipolar Power

Operating Temp Range  

-65C to 200C

Collector Current (DC)  

50(A)

Rad Hardened  

No

DC Current Gain  

15@25A@2V/5@50A@5V

Mounting  

Through Hole

Package  

Bag

Current-Collector (Ic) (Max)  

50 A

Mfr  

NTE Electronics, Inc

Product Status  

Active

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

ECCN Code  

EAR99

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Frequency  

2(MHz)

Pin Count  

2 +Tab

JESD-30 Code  

O-MBFM-P2

Qualification Status  

Not Qualified

Configuration  

SINGLE

Power Dissipation  

300(W)

Case Connection  

COLLECTOR

Output Power  

Not Required(W)

Power - Max  

300 W

Transistor Application  

SWITCHING

Polarity/Channel Type  

NPN

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

15 @ 25A, 2V

Current - Collector Cutoff (Max)  

1mA

JEDEC-95 Code  

TO-3

Vce Saturation (Max) @ Ib, Ic  

5V @ 10A, 50A

Voltage - Collector Emitter Breakdown (Max)  

80 V

Frequency - Transition  

2MHz

Power Dissipation-Max (Abs)  

300 W

Collector Current-Max (IC)  

50 A

DC Current Gain-Min (hFE)  

5

Collector-Emitter Voltage-Max  

80 V

Power Dissipation Ambient-Max  

300 W