Surface Mount  

YES

Number of Terminals  

3

Transistor Element Material  

SILICON

Reflow Temperature-Max (s)  

30

Package Style  

SMALL OUTLINE

Package Shape  

RECTANGULAR

Package Body Material  

PLASTIC/EPOXY

Operating Temperature-Min  

-55 °C

Operating Temperature-Max  

150 °C

Number of Elements  

1

Moisture Sensitivity Levels  

1

Drain Current-Max (ID)  

0.53 A

Samacsys Description  

SI2325DS-T1-E3, P-channel MOSFET Transistor 0.53 A 150 V, 3-Pin TO-236

Risk Rank  

1.7

Package Description  

SMALL OUTLINE, R-PDSO-G3

Part Package Code  

SOT-23

Ihs Manufacturer  

VISHAY SILICONIX

Part Life Cycle Code  

Active

Rohs Code  

Yes

Manufacturer Part Number  

SI2325DS-T1-E3

JESD-609 Code  

e3

Pbfree Code  

Yes

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Reach Compliance Code  

unknown

Pin Count  

3

JESD-30 Code  

R-PDSO-G3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Transistor Application  

SWITCHING

Polarity/Channel Type  

P-CHANNEL

JEDEC-95 Code  

TO-236AB

Drain Current-Max (Abs) (ID)  

0.53 A

Drain-source On Resistance-Max  

1.3 Ω

DS Breakdown Voltage-Min  

150 V

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

1.25 W