Surface Mount  

NO

Mounting Type  

Through Hole

Package / Case  

TO-213AA, TO-66-2

Supplier Device Package  

TO-66 (TO-213AA)

Number of Terminals  

2

Transistor Element Material  

SILICON

Manufacturer Part Number  

2N6301E3

Rohs Code  

Yes

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Package Description  

FLANGE MOUNT, O-MBFM-P2

Risk Rank  

5

Number of Elements  

1

Operating Temperature-Max  

200 °C

Package Body Material  

METAL

Package Shape  

ROUND

Package Style  

FLANGE MOUNT

Reflow Temperature-Max (s)  

NOT SPECIFIED

Package  

Bulk

Current-Collector (Ic) (Max)  

500 µA

Mfr  

Microchip Technology

Product Status  

Active

Emitter- Base Voltage VEBO  

5 V

Pd - Power Dissipation  

75 W

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

500

Collector-Emitter Saturation Voltage  

3 V

Minimum Operating Temperature  

- 55 C

Mounting Styles  

Through Hole

Gain Bandwidth Product fT  

-

Collector- Emitter Voltage VCEO Max  

80 V

Operating Temperature  

-55°C ~ 200°C (TJ)

Series  

-

JESD-609 Code  

e3

Terminal Finish  

Matte Tin (Sn)

Technology  

Si

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

JESD-30 Code  

O-MBFM-P2

Configuration  

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Case Connection  

COLLECTOR

Power - Max  

75 W

Polarity/Channel Type  

NPN

Transistor Type  

NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce  

750 @ 4A, 3V

Current - Collector Cutoff (Max)  

500µA

JEDEC-95 Code  

TO-213AA

Vce Saturation (Max) @ Ib, Ic  

3V @ 80mA, 8A

Voltage - Collector Emitter Breakdown (Max)  

80 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

80 V

Power Dissipation-Max (Abs)  

75 W

Collector Current-Max (IC)  

8 A

DC Current Gain-Min (hFE)  

100

Collector-Emitter Voltage-Max  

80 V