Mounting Type  

Through Hole

Package / Case  

TO-204AA, TO-3

Surface Mount  

NO

Number of Pins  

2 +Tab

Supplier Device Package  

TO-3

Number of Terminals  

2

Transistor Element Material  

SILICON

Emitter-Base Voltage  

6(V)

Collector Current (DC)  

5(A)

Package Type  

TO-3

Mounting  

Through Hole

Operating Temperature Classification  

Military

Operating Temp Range  

-65C to 200C

Rad Hardened  

No

Number of Elements  

1

Category  

Bipolar Power

Transistor Polarity  

NPN

DC Current Gain  

8@3A@5V

Manufacturer Part Number  

NTE52

Manufacturer  

NTE Electronics

Package  

Bag

Current-Collector (Ic) (Max)  

5 A

Mfr  

NTE Electronics, Inc

Product Status  

Active

Package Description  

FLANGE MOUNT, O-MBFM-P2

Package Style  

FLANGE MOUNT

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Package Shape  

ROUND

Part Life Cycle Code  

Active

Ihs Manufacturer  

NTE ELECTRONICS INC

Risk Rank  

1.73

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

ECCN Code  

EAR99

HTS Code  

8541.29.00.95

Subcategory  

Other Transistors

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

JESD-30 Code  

O-MBFM-P2

Qualification Status  

Not Qualified

Configuration  

Single

Power Dissipation  

125(W)

Case Connection  

COLLECTOR

Output Power  

Not Required(W)

Power - Max  

125 W

Transistor Application  

SWITCHING

Polarity/Channel Type  

NPN

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

8 @ 3A, 5V

Current - Collector Cutoff (Max)  

500µA

JEDEC-95 Code  

TO-3

Vce Saturation (Max) @ Ib, Ic  

3V @ 1A, 5A

Voltage - Collector Emitter Breakdown (Max)  

450 V

Frequency - Transition  

-

Power Dissipation-Max (Abs)  

125 W

Collector Current-Max (IC)  

5 A

DC Current Gain-Min (hFE)  

8

Collector-Emitter Voltage-Max  

450 V

Power Dissipation Ambient-Max  

125 W