Surface Mount  

YES

Number of Terminals  

8

Transistor Element Material  

SILICON

EU RoHS  

Compliant

ECCN (US)  

EAR99

Automotive  

No

PPAP  

No

Category  

Power MOSFET

Channel Mode  

Enhancement

Number of Elements per Chip  

2

Maximum Drain Source Voltage (V)  

30

Maximum Gate Source Voltage (V)  

±20

Maximum Continuous Drain Current (A)  

7.5

Maximum Drain Source Resistance (MOhm)  

22@10V

Typical Gate Charge @ Vgs (nC)  

11@5V

Typical Input Capacitance @ Vds (pF)  

1233@15V

Maximum Power Dissipation (mW)  

2000

Typical Fall Time (ns)  

11

Typical Rise Time (ns)  

5

Typical Turn-Off Delay Time (ns)  

25

Typical Turn-On Delay Time (ns)  

8

Minimum Operating Temperature (°C)  

-55

Maximum Operating Temperature (°C)  

150

Mounting  

Surface Mount

Package Height  

1.65(Max)

Package Width  

3.9

Package Length  

4.9

PCB changed  

8

Standard Package Name  

SOP

Supplier Package  

SOIC N

Lead Shape  

Gull-wing

Package Description  

SO-8

Package Style  

SMALL OUTLINE

Moisture Sensitivity Levels  

1

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Manufacturer Part Number  

FDS6990S

Package Shape  

RECTANGULAR

Manufacturer  

Rochester Electronics LLC

Number of Elements  

2

Part Life Cycle Code  

Active

Ihs Manufacturer  

ROCHESTER ELECTRONICS LLC

Risk Rank  

5.34

Part Package Code  

SOT

Drain Current-Max (ID)  

7.5 A

Packaging  

Tape and Reel

JESD-609 Code  

e3

Pbfree Code  

Yes

Part Status  

Obsolete

Terminal Finish  

MATTE TIN

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Reach Compliance Code  

unknown

Pin Count  

8

JESD-30 Code  

R-PDSO-G8

Qualification Status  

COMMERCIAL

Configuration  

Dual Dual Drain

Operating Mode  

ENHANCEMENT MODE

Transistor Application  

SWITCHING

Polarity/Channel Type  

N-CHANNEL

Drain-source On Resistance-Max  

0.022 Ω

Pulsed Drain Current-Max (IDM)  

20 A

DS Breakdown Voltage-Min  

30 V

Channel Type  

N

FET Technology  

METAL-OXIDE SEMICONDUCTOR