Surface Mount  

YES

Number of Terminals  

3

Transistor Element Material  

SILICON

EU RoHS  

Compliant

ECCN (US)  

EAR99

Automotive  

No

PPAP  

No

Category  

Power MOSFET

Process Technology  

DMOS

Channel Mode  

Enhancement

Number of Elements per Chip  

1

Maximum Drain Source Voltage (V)  

25

Maximum Gate Source Voltage (V)  

8

Operating Junction Temperature (°C)  

-55 to 150

Maximum Continuous Drain Current (A)  

0.12

Maximum Drain Source Resistance (mOhm)  

[email protected]

Typical Gate Charge @ Vgs (nC)  

[email protected]

Typical Input Capacitance @ Vds (pF)  

11@10V

Maximum Power Dissipation (mW)  

350

Typical Fall Time (ns)  

5

Typical Rise Time (ns)  

8

Typical Turn-Off Delay Time (ns)  

9

Typical Turn-On Delay Time (ns)  

5

Minimum Operating Temperature (°C)  

-55

Maximum Operating Temperature (°C)  

150

Mounting  

Surface Mount

Package Height  

0.93

Package Width  

1.3

Package Length  

2.92

PCB changed  

3

Standard Package Name  

SOT

Supplier Package  

SOT-23

Lead Shape  

Gull-wing

Package Style  

SMALL OUTLINE

Moisture Sensitivity Levels  

1

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

FDV302P_NL

Package Shape  

RECTANGULAR

Manufacturer  

Fairchild Semiconductor Corporation

Number of Elements  

1

Part Life Cycle Code  

Obsolete

Ihs Manufacturer  

FAIRCHILD SEMICONDUCTOR CORP

Risk Rank  

5.47

Drain Current-Max (ID)  

0.12 A

Packaging  

Tape and Reel

JESD-609 Code  

e3

Part Status  

Obsolete

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOGIC LEVEL COMPATIBLE

HTS Code  

8541.21.00.95

Subcategory  

Other Transistors

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

Pin Count  

3

JESD-30 Code  

R-PDSO-G3

Qualification Status  

Not Qualified

Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Transistor Application  

SWITCHING

Polarity/Channel Type  

P-CHANNEL

Drain Current-Max (Abs) (ID)  

0.12 A

Drain-source On Resistance-Max  

10 Ω

DS Breakdown Voltage-Min  

25 V

Channel Type  

P

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

0.35 W