Surface Mount  

YES

Number of Terminals  

2

Transistor Element Material  

SILICON

EU RoHS  

Compliant with Exemption

ECCN (US)  

EAR99

SVHC  

Yes

SVHC Exceeds Threshold  

Yes

Automotive  

No

PPAP  

No

Category  

Power MOSFET

Channel Mode  

Enhancement

Number of Elements per Chip  

1

Maximum Drain Source Voltage (V)  

30

Maximum Gate Source Voltage (V)  

±16

Maximum Continuous Drain Current (A)  

54

Maximum Drain Source Resistance (MOhm)  

12@10V

Typical Gate Charge @ Vgs (nC)  

18@5V

Typical Input Capacitance @ Vds (pF)  

2164@15V

Maximum Power Dissipation (mW)  

57000

Typical Fall Time (ns)  

10

Typical Rise Time (ns)  

5

Typical Turn-Off Delay Time (ns)  

35

Typical Turn-On Delay Time (ns)  

9

Minimum Operating Temperature (°C)  

-55

Maximum Operating Temperature (°C)  

175

Mounting  

Surface Mount

Package Height  

2.39(Max)

Package Width  

6.22(Max)

Package Length  

6.73(Max)

PCB changed  

2

Tab  

Tab

Standard Package Name  

TO-252

Supplier Package  

DPAK

Package Description  

DPAK-3

Package Style  

SMALL OUTLINE

Moisture Sensitivity Levels  

1

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

Yes

Manufacturer Part Number  

FDD6692

Package Shape  

RECTANGULAR

Manufacturer  

Rochester Electronics LLC

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

ROCHESTER ELECTRONICS LLC

Risk Rank  

5.39

Part Package Code  

TO-252

Drain Current-Max (ID)  

54 A

Packaging  

Tape and Reel

JESD-609 Code  

e3

Pbfree Code  

Yes

Part Status  

Obsolete

Terminal Finish  

MATTE TIN

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Reach Compliance Code  

unknown

Pin Count  

3

JESD-30 Code  

R-PSSO-G2

Qualification Status  

COMMERCIAL

Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

Transistor Application  

SWITCHING

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-252

Drain-source On Resistance-Max  

0.012 Ω

Pulsed Drain Current-Max (IDM)  

162 A

DS Breakdown Voltage-Min  

30 V

Channel Type  

N

Avalanche Energy Rating (Eas)  

165 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR