Package / Case  

TO-93-3

Material  

Si

EU RoHS  

Compliant

ECCN (US)  

EAR99

HTS  

8541.21.00.75

Automotive  

No

PPAP  

No

Category  

Bipolar Power

Number of Elements per Chip  

1

Maximum Collector Base Voltage (V)  

140

Maximum Collector-Emitter Voltage (V)  

80

Maximum Emitter Base Voltage (V)  

7

Maximum Base Emitter Saturation Voltage (V)  

1.1@15mA@150mA

Maximum Collector-Emitter Saturation Voltage (V)  

0.2@15mA@150mA|0.5@50mA@500mA

Maximum DC Collector Current (A)  

1

Maximum Collector Cut-Off Current (nA)  

10

Minimum DC Current Gain  

[email protected]@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V

Maximum Power Dissipation (mW)  

800

Minimum Operating Temperature (°C)  

-65

Maximum Operating Temperature (°C)  

200

Mounting  

Through Hole

Package Height  

6.6(Max)

PCB changed  

3

Supplier Package  

TO-39

Emitter- Base Voltage VEBO  

7 V

Pd - Power Dissipation  

5 W

Transistor Polarity  

NPN

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

80

Collector-Emitter Saturation Voltage  

500 mV

Unit Weight  

0.007654 oz

Minimum Operating Temperature  

- 65 C

Factory Pack QuantityFactory Pack Quantity  

3000

Mounting Styles  

Through Hole

Manufacturer  

Rectron

Brand  

Rectron

Maximum DC Collector Current  

1 A

DC Current Gain hFE Max  

300 at 150 mA, 10 V

RoHS  

Details

Collector- Emitter Voltage VCEO Max  

80 V

Packaging  

Bulk

Part Status  

Unconfirmed

Type  

NPN

Subcategory  

Transistors

Technology  

Si

Pin Count  

3

Configuration  

Single

Product Type  

BJTs - Bipolar Transistors

Collector Base Voltage (VCBO)  

140 V

Continuous Collector Current  

1 A

Product Category  

Bipolar Transistors - BJT

Diameter  

9.39(Max)