Lifecycle Status  

Production (Last Updated: 2 months ago)

Package / Case  

TO-39-3

Mounting Type  

Through Hole

Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-39

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

N

Mounting Styles  

Through Hole

Transistor Polarity  

PNP

Collector- Emitter Voltage VCEO Max  

80 V

Emitter- Base Voltage VEBO  

5.5 V

Collector-Emitter Saturation Voltage  

750 mV

Maximum DC Collector Current  

10 A

Pd - Power Dissipation  

1 W

Gain Bandwidth Product fT  

-

Minimum Operating Temperature  

- 65 C

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

30 at 2.5 A, 5 VDC

DC Current Gain hFE Max  

90 at 2.5 A, 5 VDC

Factory Pack QuantityFactory Pack Quantity  

1

Package  

Bulk

Current-Collector (Ic) (Max)  

2 A

Base Product Number  

2N5151

Mfr  

Microchip Technology

Product Status  

Active

Number of Elements  

1

Package Description  

HERMETIC SEALED, METAL CAN-3

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

175 °C

Rohs Code  

No

Transition Frequency-Nom (fT)  

60 MHz

Manufacturer Part Number  

2N5151

Turn-on Time-Max (ton)  

1900 ns

Package Shape  

ROUND

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Turn-off Time-Max (toff)  

1900 ns

Risk Rank  

5.02

Part Package Code  

BCY

Packaging  

Bulk

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

MIL-PRF-19500/545

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

Max Operating Temperature  

200 °C

Min Operating Temperature  

-65 °C

HTS Code  

8541.29.00.95

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Pin Count  

2

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Polarity  

PNP

Configuration  

Single

Power Dissipation  

1 W

Power - Max  

1 W

Transistor Application  

SWITCHING

Polarity/Channel Type  

PNP

Transistor Type  

PNP

Collector Emitter Voltage (VCEO)  

80 V

DC Current Gain (hFE) (Min) @ Ic, Vce  

30 @ 2.5A, 5V

Current - Collector Cutoff (Max)  

50µA

JEDEC-95 Code  

TO-39

Vce Saturation (Max) @ Ib, Ic  

1.5V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max)  

80 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

100 V

Power Dissipation-Max (Abs)  

11.8 W

Emitter Base Voltage (VEBO)  

5.5 V

Collector Current-Max (IC)  

2 A

DC Current Gain-Min (hFE)  

20

Collector-Emitter Voltage-Max  

80 V