Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Number of Terminals  

2

Transistor Element Material  

SILICON

RoHS  

N

Mounting Styles  

Through Hole

Transistor Polarity  

NPN

Collector- Emitter Voltage VCEO Max  

40 V

Emitter- Base Voltage VEBO  

5 V

Collector-Emitter Saturation Voltage  

750 mV

Maximum DC Collector Current  

5 A

Pd - Power Dissipation  

88 W

Gain Bandwidth Product fT  

-

Minimum Operating Temperature  

- 65 C

Maximum Operating Temperature  

+ 200 C

Factory Pack QuantityFactory Pack Quantity  

1

Package  

Bulk

Base Product Number  

2N4913

Mfr  

Microchip Technology

Product Status  

Active

Power Dissipation (Max)  

88 W

Package Description  

FLANGE MOUNT, O-MBFM-P2

Package Style  

FLANGE MOUNT

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

No

Manufacturer Part Number  

2N4913

Package Shape  

ROUND

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.15

Packaging  

Tray

Series  

*

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

HTS Code  

8541.29.00.95

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

JESD-30 Code  

O-MBFM-P2

Qualification Status  

Not Qualified

Configuration  

Single

Polarity/Channel Type  

NPN

Collector Emitter Voltage (VCEO)  

40 V

Max Collector Current  

5 A

JEDEC-95 Code  

TO-3

Collector Base Voltage (VCBO)  

40 V

Collector Current-Max (IC)  

5 A

DC Current Gain-Min (hFE)  

25

Collector-Emitter Voltage-Max  

40 V

Radiation Hardening  

No