Package / Case  

TO-66-2

Mounting Type  

Through Hole

Surface Mount  

NO

Number of Terminals  

2

Transistor Element Material  

SILICON

RoHS  

N

Mounting Styles  

Through Hole

Transistor Polarity  

PNP

Collector- Emitter Voltage VCEO Max  

60 V

Emitter- Base Voltage VEBO  

5 V

Collector-Emitter Saturation Voltage  

2 V

Maximum DC Collector Current  

7 A

Pd - Power Dissipation  

90 W

Gain Bandwidth Product fT  

-

Minimum Operating Temperature  

- 65 C

Maximum Operating Temperature  

+ 200 C

DC Collector/Base Gain hfe Min  

20

Factory Pack QuantityFactory Pack Quantity  

1

Package  

Bulk

Current-Collector (Ic) (Max)  

7 A

Base Product Number  

2N6317

Mfr  

Microchip Technology

Product Status  

Active

Package Style  

FLANGE MOUNT

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

No

Manufacturer Part Number  

2N6317

Package Shape  

ROUND

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.32

Packaging  

Tray

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

HTS Code  

8541.29.00.95

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

JESD-30 Code  

O-MBFM-P2

Qualification Status  

Not Qualified

Configuration  

Single

Power - Max  

90 W

Polarity/Channel Type  

PNP

Transistor Type  

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce  

25 @ 2.5A, 4V

Current - Collector Cutoff (Max)  

500µA

JEDEC-95 Code  

TO-66

Vce Saturation (Max) @ Ib, Ic  

2V @ 1.75A, 7A

Voltage - Collector Emitter Breakdown (Max)  

60 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

60 V

Collector Current-Max (IC)  

7 A

DC Current Gain-Min (hFE)  

20

Continuous Collector Current  

7 A

Collector-Emitter Voltage-Max  

60 V