Lifecycle Status  

Production (Last Updated: 2 months ago)

Package / Case  

TO-5-3

Mounting Type  

Through Hole

Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-5

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

N

Mounting Styles  

Through Hole

Factory Pack QuantityFactory Pack Quantity  

1

Transistor Polarity  

NPN

Package  

Bulk

Current-Collector (Ic) (Max)  

3 A

Base Product Number  

2N3420

Mfr  

Microchip Technology

Product Status  

Active

Collector-Emitter Saturation Voltage  

500 mV

Schedule B  

8541290080

Collector-Emitter Breakdown Voltage  

60 V

hFEMin  

40

Number of Elements  

1

Package Description  

CYLINDRICAL, O-MBCY-W3

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Rohs Code  

No

Manufacturer Part Number  

2N3420

Turn-on Time-Max (ton)  

300 ns

Package Shape  

ROUND

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Turn-off Time-Max (toff)  

1300 ns

Risk Rank  

1.47

Packaging  

Bulk

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Max Operating Temperature  

200 °C

Min Operating Temperature  

-65 °C

HTS Code  

8541.29.00.95

Max Power Dissipation  

1 W

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

not_compliant

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

SINGLE

Power Dissipation  

1 W

Power - Max  

1 W

Polarity/Channel Type  

NPN

Transistor Type  

NPN

Collector Emitter Voltage (VCEO)  

60 V

Max Collector Current  

3 A

DC Current Gain (hFE) (Min) @ Ic, Vce  

40 @ 1A, 2V

Current - Collector Cutoff (Max)  

5µA

JEDEC-95 Code  

TO-5

Vce Saturation (Max) @ Ib, Ic  

500mV @ 200mA, 2A

Voltage - Collector Emitter Breakdown (Max)  

60 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

85 V

Emitter Base Voltage (VEBO)  

8 V

Collector Current-Max (IC)  

3 A

DC Current Gain-Min (hFE)  

15

Max Junction Temperature (Tj)  

200 °C

Continuous Collector Current  

3

Collector-Emitter Voltage-Max  

60 V

Height  

6.6 mm

Radiation Hardening  

No