Package / Case  

TO-5-3

Mounting Type  

Through Hole

Surface Mount  

NO

Supplier Device Package  

TO-39

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

N

Mounting Styles  

Through Hole

Transistor Polarity  

NPN

Collector- Emitter Voltage VCEO Max  

30 V

Emitter- Base Voltage VEBO  

5 V

Collector-Emitter Saturation Voltage  

1.5 V

Maximum DC Collector Current  

500 mA

Pd - Power Dissipation  

800 mW

Gain Bandwidth Product fT  

-

Minimum Operating Temperature  

- 65 C

Maximum Operating Temperature  

+ 200 C

Factory Pack QuantityFactory Pack Quantity  

1

Package  

Bulk

Current-Collector (Ic) (Max)  

500 mA

Base Product Number  

2N1711

Mfr  

Microchip Technology

Product Status  

Active

Package Style  

CYLINDRICAL

Package Body Material  

METAL

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

200 °C

Rohs Code  

No

Manufacturer Part Number  

2N1711S

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.09

Packaging  

Bulk

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

JESD-609 Code  

e0

Pbfree Code  

No

ECCN Code  

EAR99

Terminal Finish  

TIN LEAD

HTS Code  

8541.21.00.95

Terminal Position  

BOTTOM

Terminal Form  

WIRE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

JESD-30 Code  

O-MBCY-W3

Qualification Status  

Not Qualified

Configuration  

Single

Power - Max  

800 mW

Polarity/Channel Type  

NPN

Transistor Type  

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce  

100 @ 150mA, 10V

Current - Collector Cutoff (Max)  

10nA (ICBO)

JEDEC-95 Code  

TO-5

Vce Saturation (Max) @ Ib, Ic  

1.5V @ 15mA, 150mA

Voltage - Collector Emitter Breakdown (Max)  

30 V

Frequency - Transition  

-

Collector Base Voltage (VCBO)  

75 V

Collector Current-Max (IC)  

0.5 A

DC Current Gain-Min (hFE)  

50

Collector-Emitter Voltage-Max  

30 V