Package / Case  

DPAK-3

Mounting Type  

Surface Mount

Number of Pins  

3

Supplier Device Package  

D-PAK (TO-252)

RoHS  

Details

Mounting Styles  

SMD/SMT

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

600 V

Id - Continuous Drain Current  

8 A

Rds On - Drain-Source Resistance  

520 mOhms

Vgs - Gate-Source Voltage  

- 25 V, + 25 V

Vgs th - Gate-Source Threshold Voltage  

4.75 V

Qg - Gate Charge  

10.3 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

90 W

Channel Mode  

Enhancement

Tradename  

MDmesh

Fall Time  

9.8 ns

Factory Pack QuantityFactory Pack Quantity  

2500

Typical Turn-Off Delay Time  

22 ns

Typical Turn-On Delay Time  

7.4 ns

Unit Weight  

0.012699 oz

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.75V @ 250µA

Product Status  

Active

Power Dissipation (Max)  

90W (Tc)

Mfr  

STMicroelectronics

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

8A (Tc)

Base Product Number  

STD11

Package  

Bulk

Continuous Drain Current Id  

8

Qualification  

-

Number of Elements per Chip  

1

Package Type  

DPAK (TO-252)

Packaging  

Cut Tape

Series  

-

Operating Temperature  

-55°C ~ 150°C (TJ)

Number of Channels  

1 Channel

Power Dissipation  

90

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

520mOhm @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

387 pF @ 100 V

Gate Charge (Qg) (Max) @ Vgs  

10.3 nC @ 10 V

Rise Time  

7.2 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±25V

Transistor Type  

1 N-Channel

Channel Type  

N Channel

FET Feature  

-