Package / Case  

TO-66-2

Surface Mount  

NO

Number of Terminals  

2

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

NPN

Collector- Emitter Voltage VCEO Max  

125 V

Emitter- Base Voltage VEBO  

6 V

Collector-Emitter Saturation Voltage  

5 V

Pd - Power Dissipation  

40 W

Gain Bandwidth Product fT  

10 MHz

Minimum Operating Temperature  

- 65 C

Maximum Operating Temperature  

+ 175 C

DC Collector/Base Gain hfe Min  

25 at 750 mA, 5 V

DC Current Gain hFE Max  

100 at 750 mA, 5 V

Factory Pack QuantityFactory Pack Quantity  

30

Package Description  

FLANGE MOUNT, O-MBFM-P2

Package Style  

FLANGE MOUNT

Package Body Material  

METAL

Operating Temperature-Min  

-65 °C

Operating Temperature-Max  

175 °C

Transition Frequency-Nom (fT)  

10 MHz

Manufacturer Part Number  

2N5050PBFREE

Package Shape  

ROUND

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

CENTRAL SEMICONDUCTOR CORP

Rise Time-Max (tr)  

300 ns

Risk Rank  

5.72

Series  

2N50

Packaging  

Tube

Terminal Position  

BOTTOM

Terminal Form  

PIN/PEG

Reach Compliance Code  

compliant

JESD-30 Code  

O-MBFM-P2

Configuration  

Single

Transistor Application  

SWITCHING

Polarity/Channel Type  

NPN

JEDEC-95 Code  

TO-66

Collector Base Voltage (VCBO)  

125 V

Power Dissipation-Max (Abs)  

40 W

Collector Current-Max (IC)  

2 A

DC Current Gain-Min (hFE)  

5

Continuous Collector Current  

2 A

Collector-Emitter Voltage-Max  

125 V

VCEsat-Max  

5 V

Collector-Base Capacitance-Max  

250 pF

Fall Time-Max (tf)  

1200 ns