Package / Case  

TO-18-3

Mounting Type  

Through Hole

Supplier Device Package  

TO-18 (TO-206AA)

Mounting Styles  

Through Hole

Transistor Polarity  

P-Channel

Vds - Drain-Source Breakdown Voltage  

30 V

Vgs - Gate-Source Breakdown Voltage  

30 V

Gate-Source Cutoff Voltage  

4 V

Drain-Source Current at Vgs=0  

3 mA

Rds On - Drain-Source Resistance  

175 Ohms

Pd - Power Dissipation  

500 mW

Minimum Operating Temperature  

- 65 C

Maximum Operating Temperature  

+ 200 C

Maximum Drain Gate Voltage  

30 V

Factory Pack QuantityFactory Pack Quantity  

1

Package  

Bulk

Mfr  

Microchip Technology

Product Status  

Active

Operating Temperature  

-65°C ~ 200°C (TJ)

Series  

-

Configuration  

Single

Power - Max  

500 mW

FET Type  

P-Channel

Input Capacitance (Ciss) (Max) @ Vds  

27pF @ 15V

Drain to Source Voltage (Vdss)  

30 V

Current - Drain (Idss) @ Vds (Vgs=0)  

5 mA @ 15 V

Voltage - Cutoff (VGS off) @ Id  

1 V @ 1 nA

Voltage - Breakdown (V(BR)GSS)  

30 V

Resistance - RDS(On)  

175 Ohms