Lifecycle Status  

Production (Last Updated: 2 months ago)

Package / Case  

TO-247-3

Mounting Type  

Through Hole

Mount  

Through Hole

Surface Mount  

NO

Supplier Device Package  

TO-247 [B]

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

800 V

Id - Continuous Drain Current  

19 A

Rds On - Drain-Source Resistance  

530 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

4 V

Qg - Gate Charge  

120 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

500 W

Channel Mode  

Enhancement

Fall Time  

27 ns

Forward Transconductance - Min  

17 S

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

95 ns

Typical Turn-On Delay Time  

21 ns

Unit Weight  

0.211644 oz

Continuous Drain Current Id  

19

Package  

Tube

Base Product Number  

APT18M80

Current - Continuous Drain (Id) @ 25℃  

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

500W (Tc)

Product Status  

Active

Number of Elements  

1

Voltage Rating (DC)  

800 V

Turn Off Delay Time  

95 ns

Package Description  

ROHS COMPLIANT PACKAGE-3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT18M80B

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.78

Part Package Code  

TO-247

Drain Current-Max (ID)  

19 A

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

JESD-609 Code  

e1

Pbfree Code  

Yes

ECCN Code  

EAR99

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED

Max Power Dissipation  

500 W

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Current Rating  

18 A

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

500

Case Connection  

DRAIN

Turn On Delay Time  

21 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

530mOhm @ 9A, 10V

Vgs(th) (Max) @ Id  

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

3760 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

120 nC @ 10 V

Rise Time  

31 ns

Drain to Source Voltage (Vdss)  

800 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

19 A

JEDEC-95 Code  

TO-247

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.53 Ω

Pulsed Drain Current-Max (IDM)  

70 A

Input Capacitance  

3.76 nF

DS Breakdown Voltage-Min  

800 V

Channel Type  

N

Avalanche Energy Rating (Eas)  

795 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Rds On Max  

530 mΩ

Radiation Hardening  

No

Lead Free  

Lead Free