Package / Case  

TO-247-3

Mount  

Through Hole

Mounting Type  

Through Hole

Supplier Device Package  

TO-247 [B]

Unit Weight  

0.211644 oz

Factory Pack QuantityFactory Pack Quantity  

1

Channel Mode  

Enhancement

Pd - Power Dissipation  

265 W

Maximum Operating Temperature  

+ 150 C

Minimum Operating Temperature  

- 55 C

Qg - Gate Charge  

43 nC

Vgs th - Gate-Source Threshold Voltage  

3 V

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Rds On - Drain-Source Resistance  

240 mOhms

Id - Continuous Drain Current  

22 A

Vds - Drain-Source Breakdown Voltage  

500 V

Transistor Polarity  

N-Channel

Mounting Styles  

Through Hole

Number of Elements  

1

Voltage Rating (DC)  

500 V

RoHS  

Compliant

Turn Off Delay Time  

18 ns

Package  

Tube

Base Product Number  

APT5024

Current - Continuous Drain (Id) @ 25℃  

22A (Tc)

Mfr  

Microchip Technology

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Packaging  

Tube

Series  

POWER MOS 7®

Part Status  

Production (Last Updated: 1 month ago)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Max Power Dissipation  

265 W

Current Rating  

22 A

Configuration  

Single

Number of Channels  

1 Channel

Power Dissipation  

265 W

Turn On Delay Time  

8 ns

FET Type  

N-Channel

Rds On (Max) @ Id, Vgs  

240mOhm @ 11A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1900 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

43 nC @ 10 V

Rise Time  

6 ns

Drain to Source Voltage (Vdss)  

500 V

Continuous Drain Current (ID)  

22 A

Gate to Source Voltage (Vgs)  

30 V

Input Capacitance  

1.9 nF

FET Feature  

-

Rds On Max  

240 mΩ

Radiation Hardening  

No

Lead Free  

Lead Free