Package / Case  

D3PAK-3

Mount  

Surface Mount

Surface Mount  

YES

Number of Terminals  

2

Transistor Element Material  

SILICON CARBIDE

RoHS  

Details

Mounting Styles  

SMD/SMT

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

700 V

Id - Continuous Drain Current  

50 A

Rds On - Drain-Source Resistance  

75 mOhms

Vgs - Gate-Source Voltage  

- 10 V, + 25 V

Vgs th - Gate-Source Threshold Voltage  

1.7 V

Qg - Gate Charge  

120 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 175 C

Pd - Power Dissipation  

220 W

Channel Mode  

Enhancement

Fall Time  

20 ns

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

34 ns

Typical Turn-On Delay Time  

11 ns

Unit Weight  

0.218699 oz

Package Description  

D3PAK, 3/2 PIN

Package Style  

SMALL OUTLINE

Package Body Material  

PLASTIC/EPOXY

Operating Temperature-Min  

-55 °C

Operating Temperature-Max  

175 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT70SM70S

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Obsolete

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.83

Drain Current-Max (ID)  

50 A

Packaging  

Tube

Series  

APT70SM70

ECCN Code  

EAR99

Max Operating Temperature  

175 °C

Min Operating Temperature  

-55 °C

Max Power Dissipation  

300 W

Terminal Position  

SINGLE

Terminal Form  

GULL WING

Reach Compliance Code  

compliant

JESD-30 Code  

R-PSSO-G2

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

Transistor Application  

SWITCHING

Rise Time  

9 ns

Drain to Source Voltage (Vdss)  

700 V

Polarity/Channel Type  

N-CHANNEL

Transistor Type  

1 N-Channel

Continuous Drain Current (ID)  

65 A

Drain Current-Max (Abs) (ID)  

50 A

Drain-source On Resistance-Max  

0.09 Ω

Pulsed Drain Current-Max (IDM)  

117 A

DS Breakdown Voltage-Min  

700 V

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

220 W

Rds On Max  

70 mΩ