Package / Case  

TO-247-3

Mounting Type  

Through Hole

Surface Mount  

NO

Supplier Device Package  

TO-247 [B]

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

500 V

Id - Continuous Drain Current  

32 A

Rds On - Drain-Source Resistance  

150 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

4 V

Qg - Gate Charge  

200 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

370 W

Channel Mode  

Enhancement

Factory Pack QuantityFactory Pack Quantity  

1

Unit Weight  

0.211644 oz

Continuous Drain Current Id  

32

Package  

Tube

Base Product Number  

APT5015

Current - Continuous Drain (Id) @ 25℃  

32A (Tc)

Mfr  

Microchip Technology

Product Status  

Active

Package Description  

FLANGE MOUNT, R-PSFM-T3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Operating Temperature-Min  

-55 °C

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT5015BVRG

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.29

Drain Current-Max (ID)  

32 A

Packaging  

Tube

Series  

POWER MOS V®

JESD-609 Code  

e1

Pbfree Code  

Yes

ECCN Code  

EAR99

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

370

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

150mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id  

4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

5280 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

300 nC @ 10 V

Drain to Source Voltage (Vdss)  

500 V

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-247

Drain-source On Resistance-Max  

0.15 Ω

Pulsed Drain Current-Max (IDM)  

128 A

DS Breakdown Voltage-Min  

500 V

Channel Type  

N

Avalanche Energy Rating (Eas)  

1300 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-