Package / Case  

TO-220-3

Surface Mount  

NO

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

1 kV

Id - Continuous Drain Current  

5 A

Rds On - Drain-Source Resistance  

2.8 Ohms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

4 V

Qg - Gate Charge  

43 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

225 W

Channel Mode  

Enhancement

Fall Time  

21 ns

Forward Transconductance - Min  

5.6 S

Factory Pack QuantityFactory Pack Quantity  

163

Typical Turn-Off Delay Time  

72 ns

Typical Turn-On Delay Time  

23 ns

Unit Weight  

0.068784 oz

Package Description  

ROHS COMPLIANT, 3 PIN

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT5F100K

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Obsolete

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.84

Part Package Code  

TO-220AB

Drain Current-Max (ID)  

32 A

JESD-609 Code  

e1

Pbfree Code  

Yes

Terminal Finish  

TIN SILVER COPPER

Additional Feature  

FAST SWITCHING, AVALANCHE RATED

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

Transistor Application  

SWITCHING

Rise Time  

21 ns

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

5 A

Drain-source On Resistance-Max  

2.9 Ω

Pulsed Drain Current-Max (IDM)  

20 A

DS Breakdown Voltage-Min  

1000 V

Avalanche Energy Rating (Eas)  

310 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs)  

225 W