Package / Case  

T-MAX-3

Mounting Type  

Through Hole

Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

T-MAX™ [B2]

Number of Terminals  

3

Transistor Element Material  

SILICON

Unit Weight  

0.208116 oz

Typical Turn-On Delay Time  

38 ns

Typical Turn-Off Delay Time  

100 ns

Factory Pack QuantityFactory Pack Quantity  

1

Forward Transconductance - Min  

43 S

Fall Time  

33 ns

Channel Mode  

Enhancement

Pd - Power Dissipation  

780 W

Maximum Operating Temperature  

+ 150 C

Minimum Operating Temperature  

- 55 C

Qg - Gate Charge  

220 nC

Vgs th - Gate-Source Threshold Voltage  

4 V

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Rds On - Drain-Source Resistance  

100 mOhms

Id - Continuous Drain Current  

56 A

Vds - Drain-Source Breakdown Voltage  

500 V

Transistor Polarity  

N-Channel

Mounting Styles  

Through Hole

RoHS  

Details

Package  

Tube

Base Product Number  

APT56F50

Current - Continuous Drain (Id) @ 25℃  

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

780W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 2.5mA

Number of Elements  

1

Turn Off Delay Time  

100 ns

Package Description  

ROHS COMPLIANT PACKAGE-3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT56F50B2

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

1.5

Part Package Code  

TO-247AB

Drain Current-Max (ID)  

56 A

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

POWER MOS 8™

JESD-609 Code  

e3

Pbfree Code  

Yes

Part Status  

Production (Last Updated: 2 months ago)

Terminal Finish  

PURE MATTE TIN

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED

Max Power Dissipation  

780 W

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

780 W

Turn On Delay Time  

38 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

100mOhm @ 28A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

8800 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

220 nC @ 10 V

Rise Time  

45 ns

Drain to Source Voltage (Vdss)  

500 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

56 A

JEDEC-95 Code  

TO-247AB

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.1 Ω

Pulsed Drain Current-Max (IDM)  

175 A

Input Capacitance  

8.8 nF

DS Breakdown Voltage-Min  

500 V

Avalanche Energy Rating (Eas)  

1200 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Rds On Max  

100 mΩ

Width  

5.31 mm

Length  

16.26 mm

Height  

21.46 mm

Radiation Hardening  

No

REACH SVHC  

unknown