Package / Case  

TO-247-3

Mounting Type  

Through Hole

Surface Mount  

NO

Supplier Device Package  

TO-264 [L]

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

800 V

Id - Continuous Drain Current  

49 A

Rds On - Drain-Source Resistance  

190 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

4 V

Qg - Gate Charge  

305 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

1.135 kW

Channel Mode  

Enhancement

Fall Time  

70 ns

Forward Transconductance - Min  

43 S

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

230 ns

Typical Turn-On Delay Time  

55 ns

Unit Weight  

0.211644 oz

Package  

Tube

Base Product Number  

APT48M80

Current - Continuous Drain (Id) @ 25℃  

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

1135W (Tc)

Product Status  

Active

Package Description  

FLANGE MOUNT, R-PSFM-T3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT48M80L

Package Shape  

RECTANGULAR

Number of Elements  

1

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

2.27

Part Package Code  

TO-264AA

Drain Current-Max (ID)  

48 A

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

JESD-609 Code  

e3

Pbfree Code  

Yes

Terminal Finish  

PURE MATTE TIN

Additional Feature  

FAST SWITCHING, AVALANCHE RATED

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

compliant

Pin Count  

3

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

200mOhm @ 24A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

9330 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

305 nC @ 10 V

Rise Time  

42 ns

Drain to Source Voltage (Vdss)  

800 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

JEDEC-95 Code  

TO-264AA

Drain-source On Resistance-Max  

0.2 Ω

Pulsed Drain Current-Max (IDM)  

173 A

DS Breakdown Voltage-Min  

800 V

Avalanche Energy Rating (Eas)  

1979 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Height  

21.46 mm

Length  

16.26 mm

Width  

5.31 mm