Package / Case  

TO-247-3

Mount  

Through Hole

Mounting Type  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

TO-247 [B]

Weight  

38.000013 g

Number of Terminals  

3

Transistor Element Material  

SILICON

Vds - Drain-Source Breakdown Voltage  

1.2 kV

Id - Continuous Drain Current  

7 A

Rds On - Drain-Source Resistance  

1.57 Ohms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

4 V

Qg - Gate Charge  

80 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

335 W

Channel Mode  

Enhancement

Tradename  

Power MOS 8

Fall Time  

13 ns

Forward Transconductance - Min  

8 S

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

45 ns

Typical Turn-On Delay Time  

14 ns

Unit Weight  

0.211644 oz

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Schedule B  

8541290080

Number of Elements  

1

Voltage Rating (DC)  

1.2 kV

Turn Off Delay Time  

45 ns

Package  

Tube

Base Product Number  

APT7F120

Current - Continuous Drain (Id) @ 25℃  

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

335W (Tc)

Product Status  

Active

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Package Description  

ROHS COMPLIANT PACKAGE-3

Package Style  

FLANGE MOUNT

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT7F120B

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.3

Part Package Code  

TO-247AB

Drain Current-Max (ID)  

7 A

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

JESD-609 Code  

e1

Pbfree Code  

Yes

Part Status  

Production (Last Updated: 1 month ago)

Resistance  

2.4 Ω

Terminal Finish  

TIN SILVER COPPER

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED

Max Power Dissipation  

335 W

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

6.6 A

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

335 W

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.9Ohm @ 3A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2565 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

80 nC @ 10 V

Rise Time  

8 ns

Drain to Source Voltage (Vdss)  

1.2 kV

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

7 A

JEDEC-95 Code  

TO-247AB

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

2.9 Ω

Pulsed Drain Current-Max (IDM)  

28 A

Input Capacitance  

2.565 nF

DS Breakdown Voltage-Min  

1200 V

Avalanche Energy Rating (Eas)  

575 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Drain to Source Resistance  

1.57 Ω

Rds On Max  

2.9 Ω

Height  

5.31 mm

Length  

21.46 mm

Width  

16.26 mm

Radiation Hardening  

No

REACH SVHC  

unknown

Lead Free  

Lead Free