Lifecycle Status  

Production (Last Updated: 2 months ago)

Package / Case  

T-MAX-3

Mounting Type  

Through Hole

Mount  

Through Hole

Surface Mount  

NO

Number of Pins  

3

Supplier Device Package  

T-MAX™ [B2]

Number of Terminals  

3

Transistor Element Material  

SILICON

RoHS  

Details

Mounting Styles  

Through Hole

Transistor Polarity  

N-Channel

Vds - Drain-Source Breakdown Voltage  

600 V

Id - Continuous Drain Current  

70 A

Rds On - Drain-Source Resistance  

75 mOhms

Vgs - Gate-Source Voltage  

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage  

4 V

Qg - Gate Charge  

330 nC

Minimum Operating Temperature  

- 55 C

Maximum Operating Temperature  

+ 150 C

Pd - Power Dissipation  

1.135 kW

Channel Mode  

Enhancement

Tradename  

Power MOS 8

Fall Time  

70 ns

Forward Transconductance - Min  

65 S

Factory Pack QuantityFactory Pack Quantity  

1

Typical Turn-Off Delay Time  

225 ns

Typical Turn-On Delay Time  

75 ns

Unit Weight  

0.208116 oz

Continuous Drain Current Id  

70

Package  

Tube

Base Product Number  

APT66M60

Current - Continuous Drain (Id) @ 25℃  

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)  

10V

Mfr  

Microchip Technology

Power Dissipation (Max)  

1135W (Tc)

Product Status  

Active

Number of Elements  

1

Voltage Rating (DC)  

600 V

Turn Off Delay Time  

225 ns

Package Description  

ROHS COMPLIANT, T-MAX, 3 PIN

Package Style  

IN-LINE

Package Body Material  

PLASTIC/EPOXY

Reflow Temperature-Max (s)  

NOT SPECIFIED

Operating Temperature-Max  

150 °C

Rohs Code  

Yes

Manufacturer Part Number  

APT66M60B2

Package Shape  

RECTANGULAR

Part Life Cycle Code  

Active

Ihs Manufacturer  

MICROSEMI CORP

Risk Rank  

5.21

Drain Current-Max (ID)  

70 A

Packaging  

Tube

Operating Temperature  

-55°C ~ 150°C (TJ)

Series  

-

Pbfree Code  

Yes

ECCN Code  

EAR99

Resistance  

90 mΩ

Terminal Finish  

Pure Matte Tin (Sn)

Max Operating Temperature  

150 °C

Min Operating Temperature  

-55 °C

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY

Max Power Dissipation  

1.135 kW

Terminal Position  

SINGLE

Terminal Form  

THROUGH-HOLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Reach Compliance Code  

unknown

Current Rating  

66 A

Pin Count  

3

JESD-30 Code  

R-PSIP-T3

Qualification Status  

Not Qualified

Configuration  

Single

Number of Channels  

1 Channel

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

1.135

Case Connection  

DRAIN

Turn On Delay Time  

75 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

100mOhm @ 33A, 10V

Vgs(th) (Max) @ Id  

5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds  

13190 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs  

330 nC @ 10 V

Rise Time  

85 ns

Drain to Source Voltage (Vdss)  

600 V

Vgs (Max)  

±30V

Polarity/Channel Type  

N-CHANNEL

Continuous Drain Current (ID)  

70 A

Gate to Source Voltage (Vgs)  

30 V

Drain-source On Resistance-Max  

0.09 Ω

Drain to Source Breakdown Voltage  

600 V

Pulsed Drain Current-Max (IDM)  

245 A

Input Capacitance  

13.19 nF

DS Breakdown Voltage-Min  

600 V

Channel Type  

N

Avalanche Energy Rating (Eas)  

1845 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

-

Drain to Source Resistance  

75 mΩ

Rds On Max  

100 mΩ

Height  

5.31 mm

Length  

21.46 mm

Width  

16.26 mm

Lead Free  

Lead Free